Typical Electrical Characteristics
0.2
0.15
V GS = -5.0V
-4.5
-4.0
-3.5
-3.0
2
V GS = -2.0 V
-2.7
1.5
-2.5
-2.7
0.1
-2.5
-3.0
0.05
-2.0
1
-4.0
-3.5
-4.5
0
0
1
2
3
4
0.5
0
0.05
0.1
0.15
0.2
1.6
-V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics .
25
-I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage .
1.4
I D = -0.05A
V GS = -2.7V
20
T A = 25°C
125 °C
I D = -0.05A
1.2
1
0.8
0.6
15
10
5
0
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
-1
T J , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature .
-V GS ,GATE TO SOURCE VOLTAGE (V)
Figure 4. On Resistance Variation with
Gate-To- Source Voltage.
0.5
V DS = -5V
T = -55°C
J
25°C
0.1
V GS = 0V
T J = 125°C
-0.75
125°C
25°C
-0.5
-0.25
0
0.01
-55°C
-0.5
-1
-1.5
-2
-2.5
-3
0.0001
V GS , GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
FDC6302P Rev.C
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相关代理商/技术参数
FDC6302P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P CH DUAL 25V 0.12A SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P CH DUAL 25V 0.12A SSOT6; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-25V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V ;RoHS Compliant: Yes
FDC6302P 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL P MOSFET -25V -120mA SUPERSOT6
FDC6302P_Q 功能描述:MOSFET SSOT-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6303 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Digital FET, Dual N-Channel
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FDC6303N_Q 功能描述:MOSFET SSOT-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6304P 功能描述:MOSFET SSOT-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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